NETSOL Parallel MRAM Products are ideal for applications that must store and retrieve data and programs quickly and frequently due to the non-volatility, virtually unlimited endurance and fast-write characteristics of STT-MRAM.

They are suited for code storage, data logging, backup memory and working memory in industrial designs and can replace Low power SRAM, FeRAM or nvSRAM with same functionality and non-volatility.

Key Features

1Mb, 2Mb, 4Mb, 8Mb, 16Mb, 32Mb, 64Mb Density
Power Supply : 1.8V (1.71V ~ 1.98V)or 3.3V (2.7V ~ 3.6V)
Parallel asynchronous interface x16/x8 I/O
page read/write function for high performance
Data Retention : 10 years
Read Endurance : unlimited
Write Endurance : 1014
No external ECC required
Package Type : 48FBGA, 44TSOP2, 54TSOP2

Product List

Density	Part Number	Organization	VDD(V)	Access Time(ns)	Temperature	Package	Status	Data Sheet
1M bit	S3R1016V1M	64Kx16	2.70~3.60	70ns	-40℃ to 85℃	44TSOP2, 48FBGA	Mass Prod.
1M bit	S3R1008V1M	128Kx8	2.70~3.60	70ns	-40℃ to 85℃	44TSOP2, 48FBGA	Mass Prod.
1M bit	S3R1016R1M	64Kx16	1.71~1.98	70ns	-40℃ to 85℃	44TSOP2, 48FBGA	Mass Prod.
1M bit	S3R1008R1M	128Kx8	1.71~1.98	70ns	-40℃ to 85℃	44TSOP2, 48FBGA	Mass Prod.
2M bit	S3R2016V1M	128Kx16	2.70~3.60	70ns	-40℃ to 85℃	44TSOP2, 48FBGA	Mass Prod.
2M bit	S3R2008V1M	256Kx8	2.70~3.60	70ns	-40℃ to 85℃	44TSOP2, 48FBGA	Mass Prod.
2M bit	S3R2016R1M	128Kx16	1.71~1.98	70ns	-40℃ to 85℃	44TSOP2, 48FBGA	Mass Prod.
2M bit	S3R2008R1M	256Kx8	1.71~1.98	70ns	-40℃ to 85℃	44TSOP2, 48FBGA	Mass Prod.
4M bit	S3R4016V1M	256Kx16	2.70~3.60	70ns	-40℃ to 85℃	44TSOP2, 48FBGA	Mass Prod.
4M bit	S3R4008V1M	512Kx8	2.70~3.60	70ns	-40℃ to 85℃	44TSOP2, 48FBGA	Mass Prod.
4M bit	S3R4016R1M	256Kx16	1.71~1.98	70ns	-40℃ to 85℃	44TSOP2, 48FBGA	Mass Prod.
4M bit	S3R4008R1M	512Kx8	1.71~1.98	70ns	-40℃ to 85℃	44TSOP2, 48FBGA	Mass Prod.
8M bit	S3R8016V1M	512Kx16	2.70~3.60	70ns	-40℃ to 85℃	48FBGA, 54TSOP2	Mass Prod.
8M bit	S3R8008V1M	1Mx8	2.70~3.60	70ns	-40℃ to 85℃	44TSOP2, 48FBGA	Mass Prod.
8M bit	S3R8016R1M	512Kx16	1.71~1.98	70ns	-40℃ to 85℃	48FBGA, 54TSOP2	Mass Prod.
8M bit	S3R8008R1M	1Mx8	1.71~1.98	70ns	-40℃ to 85℃	44TSOP2, 48FBGA	Mass Prod.
16M bit	S3R1616V1M	1Mx16	2.70~3.60	70ns	-40℃ to 85℃	48FBGA, 54TSOP2	Mass Prod.
16M bit	S3R1608V1M	2Mx8	2.70~3.60	70ns	-40℃ to 85℃	44TSOP2, 48FBGA	Mass Prod.
16M bit	S3R1616R1M	1Mx16	1.71~1.98	70ns	-40℃ to 85℃	48FBGA, 54TSOP2	Mass Prod.
16M bit	S3R1608R1M	2Mx8	1.71~1.98	70ns	-40℃ to 85℃	44TSOP2, 48FBGA	Mass Prod.
32M bit	S3R3216V1M	2Mx16	2.70~3.60	70ns	-40℃ to 85℃	48FBGA, 54TSOP2	Mass Prod.
32M bit	S3R3216R1M	2Mx16	1.71~1.98	70ns	-40℃ to 85℃	48FBGA, 54TSOP2	Mass Prod.
64M bit	S3R6416V1M	4Mx16	2.70~3.60	70ns	-40℃ to 85℃	48FBGA	ES
64M bit	S3R6416R1M	4Mx16	1.71~1.98	70ns	-40℃ to 85℃	48FBGA	ES

* ES : Engineer Sample, UD : Under Development

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