SK hynix’s LPDDR5T, World’s Fastest Mobile DRAM, Completes Compatibility Validation with Qualcomm3
发表时间：2023-12-14 09:36网址：http://glochip.com/news/ 
News Highlights
Seoul, October 25, 2023SK hynix Inc. (or “the company”, www.skhynix.com) announced today that it has started commercialization of the LPDDR5T(Low Power Double Data Rate 5 Turbo)1, the world’s fastest DRAM for mobile with 9.6Gbps speed. The company said that it has obtained the validation that the LPDDR5T is compatible with Qualcomm Technologies’ new Snapdragon® 8 Gen 3 Mobile Platform, marking the industry’s first case for such product to be verified by the U.S. company. 1LPDDR: Low power DRAM for mobile devices, including smartphones and tablets, aimed at minimizing power consumption and that features low voltage operation. The latest specifications are for the 7th generation, succeeding the series that end with 1, 2, 3, 4, 4X, 5 and 5X. LPDDR5T is a newly developed version by SK hynix, and an upgraded product of the 7th generation (5X), prior to the development of the 8th generation LPDDR6.
SK hynix has proceeded with the compatibility validation of the LPDDR5T, following the completion of the development in January, with support from Qualcomm Technologies. The completion of the process means that it is compatible with Snapdragon 8 Gen 3. With the validation process with Qualcomm Technologies, a leader in wireless telecommunication products and services, and other major mobile AP(Application Processor) providers successfully completed, SK hynix expects the range of the LPDDR5T adoption to grow rapidly. The company plans to provide 16GB-capacity product, a combination of multiple single LPDDR5T chips, of which data processing speed is 77GB per second, equivalent to processing 15 Full-HD movies within a second. The LPDDR5T product also holds an edge in power consumption, performing at the lowest voltage of the 1.01~1.12V standards stipulated by the Joint Electron Device Engineering Council, or JEDEC. SK hynix applied the HKMG (High-K Metal Gate)2 process to bring a remarkable improvement in both speed and power efficiency. With the adoption of this technology, the company expects the LPDDR5T to gain a large share of the market before the next-generation LPDDR6 is introduced. 2HKMG (High-K Metal Gate): A next-generation process that uses a material with a high dielectric constant (K) in the insulating film inside DRAM transistors to prevent leakage currents and to improve capacitance. It reduces power consumption, while increasing speed. SK hynix was the industry’s first to integrate the process in mobile DRAM in November. “Generative AI applications running on our new Snapdragon 8 Gen 3 enables exciting new use cases by executing LLMs and LVMs on device with minimal latency and at the lowest power,” said Ziad Asghar, Senior Vice President of Product Management at Qualcomm Technologies, Inc. “Our collaboration with SK hynix pairs the fastest mobile memory with our latest Snapdragon mobile platform and delivers amazing on-device, ultra-personalized AI experiences such as AI virtual assistants for smartphone users.” “We are thrilled that we have met our customers’ needs for the ultra-high performance mobile DRAM with the provision of the LPDDR5T,” said Sungsoo Ryu, head of DRAM Product Planning at SK hynix. Ryu said that smartphones are expected to grow their presence as the key devices where the AI technologies are fully applied onto in coming years. “I believe the smartphone functions, backed by excellent DRAM for mobile, should continue to improve. We will continue to work toward strengthening our collaboration with Qualcomm Technologies to advance the technology in this space.” Snapdragon is a trademark or registered trademark of Qualcomm Incorporated. |
